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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1770
DESCRIPTION *High Power Dissipation *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min.) *Complement to Type 2SB1190
APPLICATIONS *Power amplifier applications. *TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
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scs .i
VALUE 200 150 6 1 2 25
UNIT
.cn mi e
V V V A A
ICM
Collector Current-Peak Total Power Dissipation @ TC=25
PC Total Power Dissipation @ Ta=25 TJ Junction Temperature 1.4
W
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1770
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; IB= 0
B
150
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 0.5mA; IC= 0
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 0.5A; IB= 50mA
1.0
V
VBE(on) ICBO
Base-Emitter On Voltage
IC= 0.3A; VCE= 10V VCB= 200V; IE= 0
1.0
V A A
Collector Cutoff Current
50
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
hFE-2
DC Current Gain
fT
Current-Gain--Bandwidth Product
COB
Output Capacitance
hFE-1 Classifications Q 60-140 P 100-240
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scs .i
IC= 0.1A; VCE= 10V
IC= 0.3A; VCE= 10V
IC= 0.1A; VCE= 10V
.cn mi e
60 50
50
240
20
MHz
IE= 0; VCB= 10V; ftest=1MHz
27
pF
isc Websitewww.iscsemi.cn
2


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